Insulated Gate Bipolar Transistor(IGBT)--Foshan Blue Rocket Electronics Co.,Ltd.

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产品型号	PD	IC	VCES	VCE(sat)			VGE(th)				管脚排列	封装
TYPE	(W)	(A)	(V)	(V)	IC(A)	VGE (V)	VCE(V)	IC(mA)	MIN.	MAX.	LEAD ARRANGING	Package
clear											GCE	TO-3P TO-247 TO-252

BRG10N120D	208	20	1200	2.4	10	15	15	0.4	5.2	6.5	GCE	TO-3P
BRG15N120D	186	30	1200	2.5	15	15	15	15	3.5	7.5	GCE	TO-3P
BRG20N120D	240	40	1200	2.5	20	15	15	15	3.5	7.5	GCE	TO-3P
BRG25N120D	312	50	1200	2.5	25	15	15	15	3.5	7.5	GCE	TO-3P
BRG60N65D	310	120	650	2.2	60	15	15	0.8	5.3	6.3	GCE	TO-3P
BRG60N60D	310	120	600	2.9	60	15	-	0.5	4	6	GCE	TO-3P
BRGH15N120D	150	30	1200	2.5	15	15	15	0.6	4.5	6.5	GCE	TO-247
BRGH25N120D	350	50	1200	2.45	25	15	15	0.6	4.5	6.5	GCE	TO-247
BRGB6N65DP	69	12	650	1.98	6	15	5	1	5.3	5.3	GCE	TO-252

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